Effect of High Impulse Voltage on Potential Induced Degradation in Crystalline Silicon Photovoltaic Modules

Abstract

Potential induced degradation (PID) is an undesirable phenomenon in crystalline Si photovoltaic (PV) modules, since it causes a performance loss in the PV modules. Meanwhile, PV systems installed in the large open-area have a possibility to be exposed to lightning strike, however there were few studies about effects of lightning strike on crystalline Si PV modules. In this study, we focused on effect of lightning impulse voltage on PID in crystalline Si PV modules. Lightning strike was simulated by a high impulse voltage generator. To reveal the effects of impulse voltage on PID in the modules, several investigations were used such as dark current-voltage measurement, electroluminescence image, and leakage current measurement. As a result, the lightning impulse voltages (−20 kV, −40kV, and +20 kV) completely accelerated the PID in the crystalline Si PV modules.