{"title":"Electro-absorption and refraction at 1.5 /spl mu/m in InGaAs/AlGaAs superlattice growth on GaAs substrate","authors":"Michael C. Y. Chan, E. Li, K. S. Chan","doi":"10.1109/TENCON.1995.496340","DOIUrl":null,"url":null,"abstract":"High indium concentration In/sub 0.65/Ga/sub 0.35/As/Al/sub 0.33/Ga/sub 0.67/As superlattices on GaAs substrates are useful for modulators and optical communication applications. This is due to the lowest loss 1.55 /spl mu/m optimum wavelength for operation of fiber optic systems. The optical parameters such as absorption coefficient and change in refractive index with applied electric field are investigated.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"42 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TENCON.1995.496340","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
High indium concentration In/sub 0.65/Ga/sub 0.35/As/Al/sub 0.33/Ga/sub 0.67/As superlattices on GaAs substrates are useful for modulators and optical communication applications. This is due to the lowest loss 1.55 /spl mu/m optimum wavelength for operation of fiber optic systems. The optical parameters such as absorption coefficient and change in refractive index with applied electric field are investigated.
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