W. Mouzannar, F. Jorge, S. Vuye, E. Dutisseuil, R. Lefevre
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引用次数: 12
Abstract
In this paper, we describe the development of high gain and high voltage 40 Gb/s modulator driver ICs. Both chips were designed with a double-distributed amplifier topology using a 0.15 /spl mu/m GaAs pHEMT technology process. The modulator driver exhibits 26 dB of small signal gain over 50 GHz of 3 dB bandwidth and provides more than 7.5 Vpp output swing in a 50 /spl Omega/ load to drive LiNbO/sub 3/ modulators.
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