G. Tao, R. Koster, A. Romanescu, S. Theeuwen, R. van Dalen, H. Bosch, Tsung-Miau Wang, Shih-Yuan Chen, Y. Jhuang, Yung-Wen Cheng
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引用次数: 1
Abstract
Lots of studies have been dedicated to NBTI/PBTI in CMOS technologies, where the gate stack is most important. In this paper, we report our study of NBTI/PBTI in LDMOST technologies for RF Power applications. The observed BTI effect is associated to the backend of the processes.
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