Measurement of low-energy Compton and neutron scattering in Si CCDs for dark matter searches

R. Šmída
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Abstract

For optimal sensitivity to low-mass dark matter candidates experiments like DAMIC-M employ skipper charged-coupled devices (CCDs) with detection threshold of just a few ionization charges. Ionization signals from small-angle Compton scatters of environmental \gammaγ-rays, an important component of the background in dark matter searches, must thus be characterized down to OO(10 eV) energy. Using a ^{241}241Am \gammaγ-ray source, we report a precise measurement of scattering on Si atomic shell electrons in a skipper CCD with single-electron resolution. Notable differences are observed between data and theoretical expectations in the L-shell energy region (<150 eV). We also present preliminary data from a skipper CCD exposed to low-energy neutrons (<24 keV) from a ^{124}124Sb^99Be photoneutron source, demonstrating a measurement of the nuclear recoil ionization efficiency in Si down to few ionization charges.
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用于暗物质搜索的Si ccd低能康普顿散射和中子散射测量
为了获得对低质量暗物质候选物质的最佳灵敏度,DAMIC-M等实验采用了探测阈值仅为几个电离电荷的跳跃电荷耦合器件(CCDs)。环境γ γ射线的小角度康普顿散射产生的电离信号是暗物质搜索背景的重要组成部分,因此必须被表征为低至0 (10 eV)能量。使用^{241}241Am \ γ γ射线源,我们报告了在单电子分辨率的跳船CCD中精确测量Si原子壳层电子散射。在l壳层能量区域(<150 eV),数据与理论期望值存在显著差异。我们还提供了一个暴露于来自^{124}124Sb^99Be光子中子源的低能中子(<24 keV)的船长CCD的初步数据,证明了Si中核反射力电离效率的测量结果,电离电荷很少。
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