{"title":"Negative Fixed Threshold Voltage on NFinFET Current-Voltage Characteristics Curves","authors":"Hsin-Chia Yang, You-Sheng Lin, Zhe-Wei Lin, Tzu-Chien Chen, Sheng-Ping Wen, Chen-yu Tsai, Kuan-Hung Chen, Pei-Jun Yang, Chia-Chun Lin, Chang-Ping Hsu, Chen-Chien Tsai, Yu-Tsung Liao, Sung-Ching Chi","doi":"10.1109/ICASI55125.2022.9774483","DOIUrl":null,"url":null,"abstract":"FinFET, another transformed type of MOSFET with the conventional mechanism, does effectively suppress the leakage current even as the channel length reduces to tens of nanometers. The whole transistor is switched on or off depending on a threshold voltage. The whole transistor may own a threshold voltage, which is associated with the band structure, dose concentration, and gate capacitor. The electrical performances may be demonstrated by the curves of current versus applied voltages. Those curves are then put through fitting by (1) and (2), in which the threshold voltage, Kn, and λ are to be determined. Therefore, based on a transistor and a chosen fixed threshold voltage, Kn is λ are decided making minimum the deviation in (3). Various threshold voltages accompany with various sets of Kn and λ. The final threshold voltage of a specific transistor is selected and made conclusively fixed through the minimum among all the total minimums.","PeriodicalId":190229,"journal":{"name":"2022 8th International Conference on Applied System Innovation (ICASI)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 8th International Conference on Applied System Innovation (ICASI)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICASI55125.2022.9774483","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
FinFET, another transformed type of MOSFET with the conventional mechanism, does effectively suppress the leakage current even as the channel length reduces to tens of nanometers. The whole transistor is switched on or off depending on a threshold voltage. The whole transistor may own a threshold voltage, which is associated with the band structure, dose concentration, and gate capacitor. The electrical performances may be demonstrated by the curves of current versus applied voltages. Those curves are then put through fitting by (1) and (2), in which the threshold voltage, Kn, and λ are to be determined. Therefore, based on a transistor and a chosen fixed threshold voltage, Kn is λ are decided making minimum the deviation in (3). Various threshold voltages accompany with various sets of Kn and λ. The final threshold voltage of a specific transistor is selected and made conclusively fixed through the minimum among all the total minimums.