{"title":"Switching Characteristics of a-ITZO Based Thin Film Transistor","authors":"Abhinandan Jain, P. K. Jain, N. Jain","doi":"10.47904/ijskit.13.1.2023.42-44","DOIUrl":null,"url":null,"abstract":"-This study examines the thickness of SiO 2 dielectric materials in a-ITZO TFT using a numerical simulation performed by the Silvaco Atlas software. The switching characteristics of the device are investigated. The thickness of dielectric oxide material varies significantly between 180 nm and 50 nm, and device characteristics are studied. The significant results as threshold voltage of -0.65 V, mobility of 16.51 cm 2 V -1 s -1 , sub-threshold swing 0.049 V/dec and I on /I off of 1.43x10 11 is obtained in simulation of ITZO TFT for 50 nm optimum SiO 2 dielectric material thickness. The switching characteristics of the device are also affected by the use of high k dielectric material. The simulation results for an a-ITZO TFT(high k dielectric material) include a V T of -0.42 V, 𝜇 of 31.15 cm 2 V -1 s -1 , S of 0.034 V/dec, and I on /I off of 1.71x10 10 .","PeriodicalId":424149,"journal":{"name":"SKIT Research Journal","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"SKIT Research Journal","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.47904/ijskit.13.1.2023.42-44","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
-This study examines the thickness of SiO 2 dielectric materials in a-ITZO TFT using a numerical simulation performed by the Silvaco Atlas software. The switching characteristics of the device are investigated. The thickness of dielectric oxide material varies significantly between 180 nm and 50 nm, and device characteristics are studied. The significant results as threshold voltage of -0.65 V, mobility of 16.51 cm 2 V -1 s -1 , sub-threshold swing 0.049 V/dec and I on /I off of 1.43x10 11 is obtained in simulation of ITZO TFT for 50 nm optimum SiO 2 dielectric material thickness. The switching characteristics of the device are also affected by the use of high k dielectric material. The simulation results for an a-ITZO TFT(high k dielectric material) include a V T of -0.42 V, 𝜇 of 31.15 cm 2 V -1 s -1 , S of 0.034 V/dec, and I on /I off of 1.71x10 10 .
本研究利用Silvaco Atlas软件进行的数值模拟研究了a- itzo TFT中sio2介电材料的厚度。研究了该器件的开关特性。介质氧化物材料的厚度在180 nm和50 nm之间有显著变化，并对器件特性进行了研究。在50 nm最佳sio2介电材料厚度的ITZO TFT模拟中，获得了阈值电压为-0.65 V，迁移率为16.51 cm 2 V -1 s -1，亚阈值摆幅为0.049 V/dec, I通/关为1.43x10 11的显著结果。高k介电材料的使用也会影响器件的开关特性。a- itzo TFT(高k介电材料)的模拟结果包括:电压T为-0.42 V，电压系数为31.15 cm 2 V -1 s -1，电压s为0.034 V/dec, I通/关为1.71x10 10。
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