{"title":"Source/Drain, Gate and Channel Engineering in HEMTs","authors":"P. Das, T. Lenka, S. Mahato, A. K. Panda","doi":"10.1201/9780429460043-4","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":235718,"journal":{"name":"Handbook for III-V High Electron Mobility Transistor Technologies","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Handbook for III-V High Electron Mobility Transistor Technologies","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1201/9780429460043-4","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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