{"title":"Source/Drain, Gate and Channel Engineering in HEMTs","authors":"P. Das, T. Lenka, S. Mahato, A. K. Panda","doi":"10.1201/9780429460043-4","DOIUrl":"https://doi.org/10.1201/9780429460043-4","url":null,"abstract":"","PeriodicalId":235718,"journal":{"name":"Handbook for III-V High Electron Mobility Transistor Technologies","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126995559","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-05-14DOI: 10.1201/9780429460043-16
Ajith Ravindran
{"title":"Double Gate High Electron Mobility Transistors","authors":"Ajith Ravindran","doi":"10.1201/9780429460043-16","DOIUrl":"https://doi.org/10.1201/9780429460043-16","url":null,"abstract":"","PeriodicalId":235718,"journal":{"name":"Handbook for III-V High Electron Mobility Transistor Technologies","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128483718","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-05-14DOI: 10.1201/9780429460043-12
N. Jaiswal, V. N. Ramakrishnan
{"title":"InP/InAlAs/InGaAs HEMTs for High Speed and Low Power Applications","authors":"N. Jaiswal, V. N. Ramakrishnan","doi":"10.1201/9780429460043-12","DOIUrl":"https://doi.org/10.1201/9780429460043-12","url":null,"abstract":"","PeriodicalId":235718,"journal":{"name":"Handbook for III-V High Electron Mobility Transistor Technologies","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125606553","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-05-14DOI: 10.1201/9780429460043-13
Roman Garcia-Perez, K. Lozano, Jorge Castillo, H. Huq
{"title":"A Study of the Elemental and Surface Characterization of AlGaN/GaN HEMT by Magnetron Sputtering System","authors":"Roman Garcia-Perez, K. Lozano, Jorge Castillo, H. Huq","doi":"10.1201/9780429460043-13","DOIUrl":"https://doi.org/10.1201/9780429460043-13","url":null,"abstract":"","PeriodicalId":235718,"journal":{"name":"Handbook for III-V High Electron Mobility Transistor Technologies","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126450137","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-05-14DOI: 10.1201/9780429460043-10
B. Syamal, A. Kundu
{"title":"AlGaN/GaN HEMT Modeling and Simulation","authors":"B. Syamal, A. Kundu","doi":"10.1201/9780429460043-10","DOIUrl":"https://doi.org/10.1201/9780429460043-10","url":null,"abstract":"","PeriodicalId":235718,"journal":{"name":"Handbook for III-V High Electron Mobility Transistor Technologies","volume":"304 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131757946","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-05-14DOI: 10.1201/9780429460043-14
J. Ajayan, D. Nirmal
{"title":"Metamorphic HEMTs for Sub Millimeter Wave Applications","authors":"J. Ajayan, D. Nirmal","doi":"10.1201/9780429460043-14","DOIUrl":"https://doi.org/10.1201/9780429460043-14","url":null,"abstract":"","PeriodicalId":235718,"journal":{"name":"Handbook for III-V High Electron Mobility Transistor Technologies","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132885388","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"HEMT Material Technology and Epitaxial Deposition Techniques","authors":"R. Komaragiri","doi":"10.1201/9780429460043-3","DOIUrl":"https://doi.org/10.1201/9780429460043-3","url":null,"abstract":"","PeriodicalId":235718,"journal":{"name":"Handbook for III-V High Electron Mobility Transistor Technologies","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116185176","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"AlGaN/GaN HEMTs for High Power Applications","authors":"P. Prajoon, Anuja Menokey","doi":"10.1201/9780429460043-5","DOIUrl":"https://doi.org/10.1201/9780429460043-5","url":null,"abstract":"","PeriodicalId":235718,"journal":{"name":"Handbook for III-V High Electron Mobility Transistor Technologies","volume":"317 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123305356","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-05-14DOI: 10.1201/9780429460043-15
D. Panda, G. Amarnath, T. Lenka
{"title":"Metal Oxide Semiconductor High Electron Mobility Transistors","authors":"D. Panda, G. Amarnath, T. Lenka","doi":"10.1201/9780429460043-15","DOIUrl":"https://doi.org/10.1201/9780429460043-15","url":null,"abstract":"","PeriodicalId":235718,"journal":{"name":"Handbook for III-V High Electron Mobility Transistor Technologies","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128900586","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Motivation Behind High Electron Mobility Transistors","authors":"M. Chakraverty","doi":"10.1201/9780429460043-1","DOIUrl":"https://doi.org/10.1201/9780429460043-1","url":null,"abstract":"","PeriodicalId":235718,"journal":{"name":"Handbook for III-V High Electron Mobility Transistor Technologies","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126573758","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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