{"title":"An 8kbit RAM + I/O Peripheral Circuit for Microprocessors","authors":"K. Horninger, G. Grassl, I. Bromme, U. Schwabe","doi":"10.1109/ESSCIRC.1980.5468790","DOIUrl":null,"url":null,"abstract":"An 8 kbit RAM + I/O peripheral circuit for microprocessors has been realized in a scaled NMOS single-layer poly technology. Cycle time is 250 ns, counter frequency is 10 MHz, chip size is 27.6 mm2 and the supply current is approx. 200 mA, with 5 V supply voltage.","PeriodicalId":168272,"journal":{"name":"ESSCIRC 80: 6th European Solid State Circuits Conference","volume":"140 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1980-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSCIRC 80: 6th European Solid State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.1980.5468790","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
An 8 kbit RAM + I/O peripheral circuit for microprocessors has been realized in a scaled NMOS single-layer poly technology. Cycle time is 250 ns, counter frequency is 10 MHz, chip size is 27.6 mm2 and the supply current is approx. 200 mA, with 5 V supply voltage.
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