Ultra-Fast Negative Bias Temperature Instability Monitoring and End-of-Life Projection

Abstract

In this paper, we propose a comprehensive solution for in-line NBTI monitor, including test structure, bias condition determination, reliability specification calculation, and lifetime projection. A smart self-heating pMOSFET has been successfully realized in 90nm standard CMOS technology. For the first time, we use channel resistance to carefully calibrate device junction temperature. Charge separation technique can precisely define NBTI cold holes regimes. No interruption adopts during our NBTI monitor stress duration, which can avoid recovery effect. Finally, the end-of-life (EoL) projection of each device, which is consistent with time-consuming package result, can be achieved by applying acceleration models. The whole monitor process of each sample can be finished within 2 minutes. This novel monitor can provide an early alert of process control diagnosis