{"title":"Reliability estimation of transistor switches in push-pull DC/DC hard switching converter","authors":"P. Prodanov, D. Dankov","doi":"10.1109/ET50336.2020.9238269","DOIUrl":null,"url":null,"abstract":"Power semiconductors have a significant importance to reliability of electronic power convertors. In recent years there are an elements with higher parameters, high efficiency and low power losses. This requirements also can be applied into the power converters. This can be used to determine their reliability parameters and its estimation. Probability of failure-free operation depends on type of elements, their electrical and thermal modes, quality and environmental conditions. In this paper are consider reliability parameters of three type of power semiconductors – SiC MOSFET, “classic” MOSFET and IGBT transistors.","PeriodicalId":178356,"journal":{"name":"2020 XXIX International Scientific Conference Electronics (ET)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 XXIX International Scientific Conference Electronics (ET)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ET50336.2020.9238269","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Power semiconductors have a significant importance to reliability of electronic power convertors. In recent years there are an elements with higher parameters, high efficiency and low power losses. This requirements also can be applied into the power converters. This can be used to determine their reliability parameters and its estimation. Probability of failure-free operation depends on type of elements, their electrical and thermal modes, quality and environmental conditions. In this paper are consider reliability parameters of three type of power semiconductors – SiC MOSFET, “classic” MOSFET and IGBT transistors.
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