Vaibhav Singh, M. Abdullah, Pritesh Tiwari, Shaily Singh
{"title":"Ultra wide Low Noise Darlington Amplifier for High Frequency application","authors":"Vaibhav Singh, M. Abdullah, Pritesh Tiwari, Shaily Singh","doi":"10.1109/ICCN.2015.67","DOIUrl":null,"url":null,"abstract":"Ultra wide band Low Noise Darlington Amplifier for High Frequency application is presented. Based on the MOSFET Switching with inductive feedback techniques and inductive peaking method, this technique exits many resonators with high quality factor at different resonance frequencies, Voltage series feedback consist using feedback element inductor, this feedback compensation technique used to sustain stability with respect to larger variation in environments' parameters, applied supply and contains of noise, multi resonant scheme is analyzed and consists high quality factor, high selective in Low Noise Darlington Amplifier, exhibit input matching, low noise and high gain at different frequencies band with relatively low power consumption 2.36pWatt. Achieves -10dB S11 impedance bandwidth achieved from 1GHz to 30GHz, -32dB, S21, -54dB, Minimum noise contain of proposed design is 115pV/√Hz. This Broad LNA Darlington amplifier proposed amplifier used for high frequency application from 1GHz to 30GHz.","PeriodicalId":431743,"journal":{"name":"2015 International Conference on Communication Networks (ICCN)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 International Conference on Communication Networks (ICCN)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCN.2015.67","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Ultra wide band Low Noise Darlington Amplifier for High Frequency application is presented. Based on the MOSFET Switching with inductive feedback techniques and inductive peaking method, this technique exits many resonators with high quality factor at different resonance frequencies, Voltage series feedback consist using feedback element inductor, this feedback compensation technique used to sustain stability with respect to larger variation in environments' parameters, applied supply and contains of noise, multi resonant scheme is analyzed and consists high quality factor, high selective in Low Noise Darlington Amplifier, exhibit input matching, low noise and high gain at different frequencies band with relatively low power consumption 2.36pWatt. Achieves -10dB S11 impedance bandwidth achieved from 1GHz to 30GHz, -32dB, S21, -54dB, Minimum noise contain of proposed design is 115pV/√Hz. This Broad LNA Darlington amplifier proposed amplifier used for high frequency application from 1GHz to 30GHz.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
