{"title":"A low-power low-noise ultrasonic receiver front-end IC for medical imaging systems","authors":"F. U. Putri, Hyouk-Kyu Cha","doi":"10.1109/ISOCC.2017.8368916","DOIUrl":null,"url":null,"abstract":"An ultrasonic receiver front-end interface IC for capacitive micromachined ultrasound transducer in medical imaging systems is presented in this work. The proposed receiver front-end IC is comprised of a low-noise preamplifier providing a transimpedance gain of approximately 103 dBohm, followed by a low-power time-gain-compensation amplifier with accurate programmable gain. An input referred noise current density of 380 fA/VHz is obtained in the front-end IC while consuming 1.28 mW at 1.5-V supply. The proposed IC is designed using 180 nm CMOS process and the overall area is 0.042 mm2.","PeriodicalId":248826,"journal":{"name":"2017 International SoC Design Conference (ISOCC)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 International SoC Design Conference (ISOCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISOCC.2017.8368916","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
An ultrasonic receiver front-end interface IC for capacitive micromachined ultrasound transducer in medical imaging systems is presented in this work. The proposed receiver front-end IC is comprised of a low-noise preamplifier providing a transimpedance gain of approximately 103 dBohm, followed by a low-power time-gain-compensation amplifier with accurate programmable gain. An input referred noise current density of 380 fA/VHz is obtained in the front-end IC while consuming 1.28 mW at 1.5-V supply. The proposed IC is designed using 180 nm CMOS process and the overall area is 0.042 mm2.