{"title":"Electromigration in Titanium Doped Aluminum Alloys","authors":"J. Towner, Albertus C. Dirks, Tien Tien","doi":"10.1109/IRPS.1986.362104","DOIUrl":null,"url":null,"abstract":"Homogeneous films of titanium-doped aluminum and aluminum-1% silicon were evaluated for possible application as interconnects in integrated circuits. Titanium concentration was systemnatically varied in the range of 0 to 1.2 wt.%. Electromigration behavior was studied for each film composition as a function of temperature. Significant differences were found between the binary and ternary alloys, corresponding to differences in the film microstructure.","PeriodicalId":354436,"journal":{"name":"24th International Reliability Physics Symposium","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1986-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"24th International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.1986.362104","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 11
Abstract
Homogeneous films of titanium-doped aluminum and aluminum-1% silicon were evaluated for possible application as interconnects in integrated circuits. Titanium concentration was systemnatically varied in the range of 0 to 1.2 wt.%. Electromigration behavior was studied for each film composition as a function of temperature. Significant differences were found between the binary and ternary alloys, corresponding to differences in the film microstructure.
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