A novel hybrid power module with dual side-gate HiGT and SiC-SBD

2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) Pub Date : 2017-05-01 DOI:10.23919/ISPSD.2017.7988892

Y. Takeuchi, T. Miyoshi, T. Furukawa, M. Shiraishi, M. Mori

引用次数: 20

Abstract

In this paper, a novel hybrid power module using a new combination of dual side-gate HiGTs (high-conductivity IGBT) and SiC-SBDs is proposed. This combination achieves drastic switching loss reductions at a turn-off loss of −43%, a turn-on loss of −71%, and a reverse recovery loss of −98% compared with a conventional combination of trench gate HiGTs and U-SFDs (ultra soft & fast recovery diode). As a result, the proposed DuSH module (dual side-gate HiGT hybrid module) has an extremely low inverter loss of −50%, similar to SiC-MOSFETs.

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一种新型的双侧栅HiGT和SiC-SBD混合电源模块

本文提出了一种新型的混合电源模块，采用双侧栅高导电性IGBT和sic - sdd的新组合。与传统的壕栅higt和U-SFDs(超软快速恢复二极管)组合相比，这种组合实现了急剧的开关损耗降低，关断损耗为- 43%，导通损耗为- 71%，反向恢复损耗为- 98%。因此，所提出的ush模块(双侧栅HiGT混合模块)具有极低的逆变器损耗- 50%，类似于sic - mosfet。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)

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