Electronic structure of semimetals from transport and fermiology experiments

A. Ehrlich, D. J. Gillespie
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引用次数: 1

Abstract

For at least thirty years most of the generic features desirable in a material to have potential for a high thermoelectric figure of merit have been known and generally not disputed. Most of these involve some aspect of the electronic structure. The latter can be measured or at least qualitatively evaluated using traditional transport and fermiology experiments. These include temperature dependent electrical resistivity, low and high field Hall effect and magnetoresistance, and the Shubnikov-de Haas (or equivalently de Haas-van Alphen) effect. In this paper the theoretical basis for this kind of an evaluation will be given, with emphasis on the semimetallic class of materials where most thermoelectrics are found but which present their own problems. The four experimental techniques mentioned above will be described and some of the subtleties of the data reduction and analysis illustrated.
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从输运和费米学实验中研究半金属的电子结构
至少三十年来,在一种具有高热电数值潜力的材料中所期望的大多数一般特征已经为人所知,并且通常没有争议。其中大多数都涉及到电子结构的某些方面。后者可以用传统的输运和术语学实验来测量或至少定性地评价。这些包括温度相关的电阻率,低场和高场霍尔效应和磁阻,以及舒布尼科夫-德哈斯(或等效的德哈斯-范阿尔芬)效应。本文将给出这种评价的理论基础,重点是半金属类材料,其中发现了大多数热电性,但存在自己的问题。将描述上面提到的四种实验技术,并说明数据简化和分析的一些微妙之处。
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