A silicon resonant thermometer for high pressure and high temperature environment

K. Kanno, M. Noro, T. Mitsuhashi, S. Yoshita, T. Mishima, T. Yoshida
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Abstract

It is a challenge to develop a thermometer for highly precise silicon pressure sensor used under a high temperature environment such as 200°C; because using on-chip diode for temperature compensation is not desirable due to the leakage current. This paper reports a novel silicon resonant thermometer designed to overcome such a problem. The resonant thermometer is composed of a central beam supported by four beams with anchors and its resonant frequency depends only on the temperature and is not affected by pressure. Experimental results show that the frequency of the resonant thermometer has no dependence of pressure up to 3 MPa, and the accuracy of temperature measurement was 0.0019° C.
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用于高压和高温环境的硅谐振温度计
在200°C等高温环境下开发高精度硅压力传感器的温度计是一个挑战;由于漏电流大,采用片上二极管进行温度补偿是不可取的。本文报道了一种新型硅谐振温度计,旨在克服这一问题。谐振式温度计由四根带锚的梁支撑的中心梁组成,其谐振频率仅取决于温度而不受压力的影响。实验结果表明,谐振式测温仪的频率在3 MPa以内不受压力的影响,测温精度为0.0019℃。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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