The effect of MESFET structures on frequency dispersion of drain conductance and its impact on mark density effect of high speed logic ICs

Abstract

This paper describes the effect of MESFET structures on frequency dispersion of drain conductance (g/sub d/). The frequency dispersion of g/sub d/ is found to be affected by gate length, buried p-layer concentration, n/sup +/ sheet resistance, and active layer thickness. Finally, we show that the device with small frequency dispersion of g/sub d/ can suppress the mark density effect of logic ICs.