Microplasma breakdown delay spectroscopy of deep level traps in the GaP:N light-emitting diodes

V. K. Ionychev, S. D. Zinkin
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Abstract

It was studied microplasma breakdown statistical delay in the green GaP:N light emitting diodes. It was detected unusual strong dependence of deep level traps on the avalanche breakdown statistical delay after changing their charge state with the voltage decreasing on the p-n junction in the temperature range 300-380 K. It was found out four deep level traps and determined their parameters.
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GaP:N发光二极管中深能级阱的微等离子体击穿延迟光谱
研究了绿色GaP:N发光二极管的微等离子体击穿统计延迟。在300 ~ 380 K的温度范围内,随着p-n结电压的降低,深能级阱的电荷状态发生变化,发现深能级阱对雪崩击穿统计延迟的依赖性异常强。发现了4个深层圈闭,并确定了它们的参数。
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