Zhang Peng, W. Xiong, Ruoyun Yao, Chaodan Chi, Yiti Xiong, C. Ji
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引用次数: 0
Abstract
We simulated InGaAs/InP Modified Uni-Traveling-Carrier Photodiodes (MUTC-PDs) with different reverse bias voltages under high optical power injection, using a commercial device level simulator Apsys. By optimizing the absorber layer structure and the operating voltage, this work achieved an MUTC-PD design with an opto-electric responsivity of 0.16A/W and over 300GHz 3-dB bandwidth under 10 mW/µm2 optical injection density.
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