{"title":"Advanced ESD rail clamp network design for high voltage CMOS applications","authors":"M. Stockinger, J. Miller","doi":"10.1109/EOSESD.2004.5272599","DOIUrl":null,"url":null,"abstract":"We present a new boosted and distributed ESD rail clamp protection approach for high voltage CMOS applications using stacked active MOSFET rail clamps and provide design guidelines for practical pad ring scenarios. This approach offers improved ESD robustness, area compactness, layout modularity, process portability, scalability, and ease of simulation.","PeriodicalId":302866,"journal":{"name":"2004 Electrical Overstress/Electrostatic Discharge Symposium","volume":"91 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"21","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 Electrical Overstress/Electrostatic Discharge Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EOSESD.2004.5272599","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 21
Abstract
We present a new boosted and distributed ESD rail clamp protection approach for high voltage CMOS applications using stacked active MOSFET rail clamps and provide design guidelines for practical pad ring scenarios. This approach offers improved ESD robustness, area compactness, layout modularity, process portability, scalability, and ease of simulation.