12% Power reduction by within-functional-block fine-grained adaptive dual supply voltage control in logic circuits with 42 voltage domains

A. Muramatsu, T. Yasufuku, M. Nomura, M. Takamiya, H. Shinohara, T. Sakurai
{"title":"12% Power reduction by within-functional-block fine-grained adaptive dual supply voltage control in logic circuits with 42 voltage domains","authors":"A. Muramatsu, T. Yasufuku, M. Nomura, M. Takamiya, H. Shinohara, T. Sakurai","doi":"10.1109/ESSCIRC.2011.6044897","DOIUrl":null,"url":null,"abstract":"Within-functional-block fine-grained adaptive dual supply voltage control (FADVC) is proposed to reduce the power of CMOS logic circuits. Both process and design variations within a functional block are compensated by the fine-grained supply voltage (V<inf>DD</inf>) control to minimize power at fixed clock frequency. In the 40-nm test chips, the layout of a data encryption core is divided into 6×7 voltage domains. Both high V<inf>DD</inf> (V<inf>DDH</inf>) and low V<inf>DD</inf> (V<inf>DDL</inf>) are supplied to each power domain and either V<inf>DDH</inf> or V<inf>DDL</inf> is adaptively selected according to the setup error warning signals generated by canary flip-flops. Compared with the conventional single V<inf>DD</inf> operation, the proposed FADVC reduced the power by 12% at 1-MHz clock in the measurement.","PeriodicalId":239979,"journal":{"name":"2011 Proceedings of the ESSCIRC (ESSCIRC)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 Proceedings of the ESSCIRC (ESSCIRC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.2011.6044897","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6

Abstract

Within-functional-block fine-grained adaptive dual supply voltage control (FADVC) is proposed to reduce the power of CMOS logic circuits. Both process and design variations within a functional block are compensated by the fine-grained supply voltage (VDD) control to minimize power at fixed clock frequency. In the 40-nm test chips, the layout of a data encryption core is divided into 6×7 voltage domains. Both high VDD (VDDH) and low VDD (VDDL) are supplied to each power domain and either VDDH or VDDL is adaptively selected according to the setup error warning signals generated by canary flip-flops. Compared with the conventional single VDD operation, the proposed FADVC reduced the power by 12% at 1-MHz clock in the measurement.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
在具有42个电压域的逻辑电路中,通过功能块内细粒度自适应双电源电压控制降低12%的功率
为了降低CMOS逻辑电路的功耗,提出了功能块内细粒度自适应双电源电压控制(FADVC)。功能模块内的工艺和设计变化都通过细粒度电源电压(VDD)控制进行补偿,以在固定时钟频率下最小化功率。在40纳米测试芯片中,数据加密核心的布局被划分为6×7电压域。每个功率域同时提供高电压点(VDDH)和低电压点(VDDL),并根据金丝雀触发器产生的设置错误警告信号自适应选择VDDH或VDDL。与传统的单VDD操作相比,该FADVC在1 mhz时钟下的功耗降低了12%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
A precision DTMOST-based temperature sensor 8T SRAM with Mimicked Negative Bit-lines and Charge Limited Sequential sense amplifier for wireless sensor nodes A 350nA voltage regulator for 90nm CMOS digital circuits with Reverse-Body-Bias A 12b 5-to-50MS/s 0.5-to-1V voltage scalable zero-crossing based pipelined ADC On-chip resonant supply noise reduction utilizing switched parasitic capacitors of sleep blocks with tri-mode power gating structure
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1