Promising Algorithm Addressing Characteristic Curves of Insulated Gated Bipolar Transistor (IGBT) Fitted by Applying Bipolar Transistor Driven by Insulated Gate Bias

Abstract

Power devices have been overwhelmingly popular for the last decades. Insulated Gate Bipolar Transistor (IGBT) is quite dominant for the capability of providing relatively high current at pretty high sustaining breakdown voltages. The underlying bipolar junction transistors (including NPN and PNP) get activated as the bias is applied to the isolated gate which is equivalent to a MOSFET transistor with high input impedance. Flowing current ignites wherever potential bipolar junction transistors locate. The current of the whole IGBT is lead by the VEC voltage while, for VMOS (vertical MOS) type, the current flows from the bottom (Emitter) straight up to the top (Collector) through N-type drift region. With the careful design of the concentration in N-type drift region, a multi-merit transistor of high power is thus available. The measured characteristic curves of current (IEC) versus voltage (VEC) are thus fitted and modeled.