{"title":"Multi-barrier inter-layer tunnel field-effect transistor","authors":"N. Prasad, X. Mou, L. Register, S. Banerjee","doi":"10.1109/IEDM.2016.7838513","DOIUrl":null,"url":null,"abstract":"The resonant tunneling characteristics of the inter-layer tunnel field-effect transistor (ITFET) within 2D van der Waals' materials can be made sharper by the use of multiple (m) intermediate well and tunnel barrier layers within a “mlTFET” variation. Ballistic quantum transport simulations are used to obtain the resonance characteristics in an MoS2 based-system, for specificity. Circuit simulations illustrate how the sharper resonance can lead to lower operating voltages and, thus, power, thereby improving the circuit performance.","PeriodicalId":186544,"journal":{"name":"2016 IEEE International Electron Devices Meeting (IEDM)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2016.7838513","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
The resonant tunneling characteristics of the inter-layer tunnel field-effect transistor (ITFET) within 2D van der Waals' materials can be made sharper by the use of multiple (m) intermediate well and tunnel barrier layers within a “mlTFET” variation. Ballistic quantum transport simulations are used to obtain the resonance characteristics in an MoS2 based-system, for specificity. Circuit simulations illustrate how the sharper resonance can lead to lower operating voltages and, thus, power, thereby improving the circuit performance.
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