Modelling and Simulation of H-type Multilevel Inverter with Secondary Circuit

V. Jha
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Abstract

This paper presents the modelling and simulation of five-level H-type inverter configuration with secondary circuit. The implementation of five-level H-type inverter with secondary circuit requires only five MOSFETs, four diodes and two capacitors which is notably less against the devices utilized in the conventional H-bridge inverter without secondary circuit. A comparative analysis of the parameter values (fundamental voltage and total harmonic distortion) of simulated load voltage waveforms of five-level conventional H-bridge inverter, five-level T-type inverter and five-level H-type inverter with secondary circuit has been accomplished. The results show the supremacy of fivelevel H-type inverter over five-level conventional H-bridge inverter and five-level T-type inverter. The simulation of Htype inverter with secondary circuit is achieved on MATLAB platform and the theoretical model is validated by experimental result generated by a hardware prototype.
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带二次回路的h型多电平逆变器建模与仿真
本文对带二次回路的五电平h型逆变器进行了建模和仿真。实现带二次电路的五电平h型逆变器只需要5个mosfet, 4个二极管和2个电容器,这与传统无二次电路的h桥逆变器中使用的器件相比明显减少。对五电平传统h桥逆变器、五电平t型逆变器和带二次回路的五电平h型逆变器模拟负载电压波形的参数值(基频电压和总谐波畸变)进行了对比分析。结果表明,五电平h型逆变器优于五电平传统h桥逆变器和五电平t型逆变器。在MATLAB平台上对带二次回路的Htype逆变器进行了仿真,并通过硬件样机的实验结果对理论模型进行了验证。
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