{"title":"Relaxed wear leveling approach for non-volatile memories","authors":"Cheng Ji, Liang Shi","doi":"10.1109/TENCON.2013.6718968","DOIUrl":null,"url":null,"abstract":"In this paper, we develop a novel wear leveling approach, Relaxed Wear Leveling, for non-volatile memories by exploiting the large number of wear cycles. All memory units of the non-volatile memories are worn for a predefined number of times before they are enrolled in wear leveling.","PeriodicalId":425023,"journal":{"name":"2013 IEEE International Conference of IEEE Region 10 (TENCON 2013)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Conference of IEEE Region 10 (TENCON 2013)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TENCON.2013.6718968","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
In this paper, we develop a novel wear leveling approach, Relaxed Wear Leveling, for non-volatile memories by exploiting the large number of wear cycles. All memory units of the non-volatile memories are worn for a predefined number of times before they are enrolled in wear leveling.
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