Enhanced recrystallization of ultra-thin α-silicon film by 2-D confined lattice regrowth

Abstract

In this paper, the improved recrystallization of ultra-thin amorphous silicon (α-Si) film was realized by two-dimensionally confined lattice regrowth with normal rapid thermal annealing process. By experimental investigation, the α-Si films with thickness of 400 Å were found to be recrystallized even at 850°C for only 35s rapid thermal annealing (RTA). With capped Si3N4 layer, the lattice regrowth was confined more strictly to along the film plane so that smoother and higher-quality polycrystalline silicon film was obtained which is suitable for future monolithic three dimensional (3D) stacked integration processes.