A novel BiCMOS TTL input buffer; a merging of analog and digital circuit design techniques

H. Tran, P. Fung, D. Scott, R. Havemann, R. Eklund
{"title":"A novel BiCMOS TTL input buffer; a merging of analog and digital circuit design techniques","authors":"H. Tran, P. Fung, D. Scott, R. Havemann, R. Eklund","doi":"10.1109/VLSIC.1988.1037425","DOIUrl":null,"url":null,"abstract":"1 TIL ML The advent of BiCMOS technology brings the availability of bipolar and CMOS components to one silicon chip, and allows the integration oi bipolar high preeirion analog circuita with lower power digital circuitry in next generation of high performance products [l]. This paper will describe a BiCMOS TTL input buffer which employs analog circuit design techniques to enhance the circuit performance. This novel implementation demonstrates the broad range of analog design techniques which can be applied in BiCMOS digital c k u i t s . The Mynchronoua operation CMOS TTL input buffer has two major obstacles that have been taunting IC circuit designers-for years. First is the variations of input trip point across power .up ply, process and temperature. Second is the high power dissipation of the buffer's first stage inverter, which results from the small voltage swing of the TTL input level. Furthermore, for eompatibility to the standby power requirements of the existing products, a CMOS input buffer often must be gated by an enabling signal for switching lo and from the standby mode. These problems require compromises to be made between speed, power, yield and reliability. and thus tend to degrade the overall performance oi the device. The transistor i i a e s of the buffer's fint stsge inverter are chosen surh that the DC trip point is centered et a midpoint of the TTL input level (1.4 volts). However, as process, power supply and temperature fluctuate. the DC trip point deviates away from the midpoint and reduces the input signal margins, as shown in figure 1. In additional, a significant current is Bowing in the CMOS input buffer when its input 1s at TTL VIH level of 2.0 volts, M shown in figure 2a. This current is caused by the CMOS input buffer's first stage inverter which is partially in an on state. reference voltage of 1.4 volts LO II Threshold Reference (TREF) ckcuit to establish a CMOS inverter trip point dependent VTH signal. This signal is connected to bipolar transistor Q1 to supply a rcgulated voltage level to the source of the Pchannel pull-up MP1. This voltage level is designed to keep the trip point of the TCON input buffer's h t stage inverter at the midpoint of TTL high and low levels. The transistor sizes of the first stage inverter M also chosen such that the voltage a t the source ofthe Pchannel MPI ir alwayat or below L voltage level of (VTTLhi + Vtp); where VTTLhi is the TTL logic high level of 2.0 volts and Vtp is the Vt of the Pchanne1 transistor. Figure 2b shows a plot of the current of the TCON input buffer vs its input voltage when condition stated above is satisfied. The buffer (current is essentially ~ e r o when its input is held at a valid TTL level. This important feature allows the standby to active enabling signal to he omitted from the design of the input circuitry. The elimination of this enabling signal allows faster eircui1 operation because the output of the buffer is in II correct logic state during the standby period.","PeriodicalId":115887,"journal":{"name":"Symposium 1988 on VLSI Circuits","volume":"69 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Symposium 1988 on VLSI Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.1988.1037425","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

1 TIL ML The advent of BiCMOS technology brings the availability of bipolar and CMOS components to one silicon chip, and allows the integration oi bipolar high preeirion analog circuita with lower power digital circuitry in next generation of high performance products [l]. This paper will describe a BiCMOS TTL input buffer which employs analog circuit design techniques to enhance the circuit performance. This novel implementation demonstrates the broad range of analog design techniques which can be applied in BiCMOS digital c k u i t s . The Mynchronoua operation CMOS TTL input buffer has two major obstacles that have been taunting IC circuit designers-for years. First is the variations of input trip point across power .up ply, process and temperature. Second is the high power dissipation of the buffer's first stage inverter, which results from the small voltage swing of the TTL input level. Furthermore, for eompatibility to the standby power requirements of the existing products, a CMOS input buffer often must be gated by an enabling signal for switching lo and from the standby mode. These problems require compromises to be made between speed, power, yield and reliability. and thus tend to degrade the overall performance oi the device. The transistor i i a e s of the buffer's fint stsge inverter are chosen surh that the DC trip point is centered et a midpoint of the TTL input level (1.4 volts). However, as process, power supply and temperature fluctuate. the DC trip point deviates away from the midpoint and reduces the input signal margins, as shown in figure 1. In additional, a significant current is Bowing in the CMOS input buffer when its input 1s at TTL VIH level of 2.0 volts, M shown in figure 2a. This current is caused by the CMOS input buffer's first stage inverter which is partially in an on state. reference voltage of 1.4 volts LO II Threshold Reference (TREF) ckcuit to establish a CMOS inverter trip point dependent VTH signal. This signal is connected to bipolar transistor Q1 to supply a rcgulated voltage level to the source of the Pchannel pull-up MP1. This voltage level is designed to keep the trip point of the TCON input buffer's h t stage inverter at the midpoint of TTL high and low levels. The transistor sizes of the first stage inverter M also chosen such that the voltage a t the source ofthe Pchannel MPI ir alwayat or below L voltage level of (VTTLhi + Vtp); where VTTLhi is the TTL logic high level of 2.0 volts and Vtp is the Vt of the Pchanne1 transistor. Figure 2b shows a plot of the current of the TCON input buffer vs its input voltage when condition stated above is satisfied. The buffer (current is essentially ~ e r o when its input is held at a valid TTL level. This important feature allows the standby to active enabling signal to he omitted from the design of the input circuitry. The elimination of this enabling signal allows faster eircui1 operation because the output of the buffer is in II correct logic state during the standby period.
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一种新型BiCMOS TTL输入缓冲器模拟和数字电路设计技术的结合
BiCMOS技术的出现将双极和CMOS元件集成到一个硅芯片上,并允许在下一代高性能产品中集成双极高分辨率模拟电路和低功耗数字电路[1]。本文将介绍一种采用模拟电路设计技术来提高电路性能的BiCMOS TTL输入缓冲器。这种新颖的实现展示了广泛的模拟设计技术,可以应用于BiCMOS数字电路。异步操作CMOS TTL输入缓冲器有两个主要障碍,多年来一直困扰着IC电路设计者。首先是输入跳闸点在电源、电源、工艺和温度上的变化。其次是缓冲器第一级逆变器的高功耗,这是由TTL输入电平的小电压摆幅造成的。此外,为了与现有产品的待机电源要求兼容,CMOS输入缓冲器通常必须通过使能信号进行门控,以便从待机模式切换到lo和off。这些问题需要在速度、功率、产量和可靠性之间做出妥协。因此往往会降低设备的整体性能。选择缓冲器第一级逆变器的晶体管,使直流跳闸点以TTL输入电平(1.4伏)的中点为中心。但是,随着工艺的进行,电源和温度会发生波动。直流跳闸点偏离中点,减少输入信号余量,如图1所示。此外,当CMOS输入缓冲器的输入1s处于TTL VIH电平2.0伏时,一个显著的电流正在弯曲,M如图2a所示。这个电流是由CMOS输入缓冲器的第一级逆变器部分处于导通状态引起的。参考电压1.4伏LO II阈值参考(TREF)电路建立CMOS逆变器脱扣点相关的VTH信号。该信号连接到双极晶体管Q1,为Pchannel上拉MP1的源提供一个稳压电平。该电压电平旨在使TCON输入缓冲器的h级逆变器的跳闸点保持在TTL高电平和低电平的中点。第一级逆变器M的晶体管尺寸也选择使Pchannel MPI源电压始终等于或低于L电压电平(VTTLhi + Vtp);其中vttli是2.0伏的TTL逻辑高电平,Vtp是pne1晶体管的Vt。图2b显示了满足上述条件时TCON输入缓冲器的电流与输入电压的关系图。当其输入保持在有效TTL电平时,缓冲电流本质上是~ e或0。这一重要特性允许从输入电路的设计中省略备用到主动使能信号。这种使能信号的消除允许更快的电路操作,因为缓冲区的输出在待机期间处于正确的逻辑状态。
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