{"title":"Ultra-low-voltage operation: Device perspective","authors":"T. Hiramoto","doi":"10.1109/ISLPED.2011.5993605","DOIUrl":null,"url":null,"abstract":"The challenges for ultra-low-voltage operation are reviewed from the device side. The degradations of transistor variability and subthreshold swing are the main obstacles for the ultra-low-voltage operation. A new transistor structure with fully-depleted channel is discussed as a possible solution.","PeriodicalId":117694,"journal":{"name":"IEEE/ACM International Symposium on Low Power Electronics and Design","volume":"73 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE/ACM International Symposium on Low Power Electronics and Design","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLPED.2011.5993605","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
The challenges for ultra-low-voltage operation are reviewed from the device side. The degradations of transistor variability and subthreshold swing are the main obstacles for the ultra-low-voltage operation. A new transistor structure with fully-depleted channel is discussed as a possible solution.
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