O. Dvornikov, V. Dziatlau, V. Tchekhovski, N. N. Prokopenko, A. Bugakova
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引用次数: 15
Abstract
A new BiJFet array chip (AC) MH2XA030 designed to accelerate the creation of analog integrated circuits (ICs) that retain their performance under the influence of penetrating radiation (the flux of neutrons and fast electrons, the accumulated dose of radiation, the single effects from heavy charged particles) and extremely low temperatures (up to −197°C) is considered. The topology of the array chip and its macro cell is described. The schematic design features of radiation-hardened and cryogenic analog ICs based on the AC are indicated. The circuit simulation results of the main analog components of the AC - voltage comparator, two operational amplifiers and two differential difference operational amplifiers are given.
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