Surface texturing using reactive ion etching for multicrystalline silicon solar cells

K. Fukui, Y. Inomata, K. Shirasawa
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引用次数: 27

Abstract

We have developed a new surface texturing technique using a reactive ion etching (RIE) method for multicrystalline silicon (mc-Si) solar cells, which is expected to form a low reflectance surface on grains of various crystalline orientations. This surface texture has a cone shape, and aspect ratio and size of which can be easily controlled. We have optimized surface shape and emitter sheet resistance. The optimum emitter sheet resistance for RIE textured cell is higher than that for the usual cell. The high aspect ratio of the cone shape makes surface reflectance low, but the cell efficiency is not so good. There is an optimum aspect ratio because the emitter of cell with high aspect ratio surface has large saturation current and cell performance is decreased with aspect ratio. We have fabricated over 17% efficient large area (225 cm/sup 2/) mc-Si solar cell using this surface texturing technique and passivation schemes which is based on the silicon nitride film deposited by the plasma CVD method and hydrogen annealing at a high temperature.
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多晶硅太阳能电池的反应离子蚀刻表面纹理
我们开发了一种新的表面纹理技术,使用反应离子蚀刻(RIE)方法用于多晶硅(mc-Si)太阳能电池,该技术有望在各种晶体取向的颗粒上形成低反射率表面。这种表面纹理具有锥体形状,其纵横比和大小可以很容易地控制。我们优化了表面形状和射极片电阻。RIE纹理电池的最佳射极片电阻高于普通电池。锥形的高长宽比使得表面反射率较低,但电池效率不高。高长宽比表面的电池发射极具有较大的饱和电流,且电池性能随长宽比的增大而降低,因此存在最佳长宽比。采用等离子体CVD法沉积氮化硅薄膜,并在高温下进行氢退火,采用表面织构技术和钝化方案制备了效率超过17%的大面积(225 cm/sup 2/) mc-Si太阳能电池。
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