P. Kushwaha, H. Agarwal, Chetan Kumar Dabhi, Yen-Kai Lin, J. Duarte, C. Hu, Y. Chauhan
{"title":"A Unified Flicker Noise Model for FDSOI MOSFETs Including Back-bias Effect","authors":"P. Kushwaha, H. Agarwal, Chetan Kumar Dabhi, Yen-Kai Lin, J. Duarte, C. Hu, Y. Chauhan","doi":"10.1109/CONECCT.2018.8482376","DOIUrl":null,"url":null,"abstract":"A physics-based unified flicker noise model for FDSOI transistor is proposed. Flicker noise power spectral density (PSD) at the front and back interfaces are calculated using oxide-trap-induced carrier number (CNF) and correlated surface mobility fluctuation (CMF) mechanisms. The model predicts correct flicker noise behavior from weak inversion region to strong inversion region for a wide range of the front and backgate voltages. The proposed model is computationally efficient and implementable in any SPICE model for circuit simulations.","PeriodicalId":430389,"journal":{"name":"2018 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CONECCT.2018.8482376","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
A physics-based unified flicker noise model for FDSOI transistor is proposed. Flicker noise power spectral density (PSD) at the front and back interfaces are calculated using oxide-trap-induced carrier number (CNF) and correlated surface mobility fluctuation (CMF) mechanisms. The model predicts correct flicker noise behavior from weak inversion region to strong inversion region for a wide range of the front and backgate voltages. The proposed model is computationally efficient and implementable in any SPICE model for circuit simulations.
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