A. Scholten, R. V. Langevelde, L. Tiemeijer, D. Klaassen
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引用次数: 21
Abstract
The physical background of the thermal noise equations of the PSP MOSFET model is presented. The PSP thermal noise model is shown to pass a number of proposed benchmark tests for MOSFET thermal noise. Without any fitting parameters, it is shown to predict with great accuracy a collection of experimental data on three modern CMOS technologies. The impact of device layout on noise properties is discussed and demonstrated experimentally
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