W. Chen, T. Y. Wu, S. Y. Yang, W. H. Liu, H. Y. Lee, Y. S. Chen, C. Tsai, P. Gu, K. Tsai, H. Wei, P. S. Chen, Y. H. Wang, F. Chen, M. Tsai
{"title":"Stabilization of resistive switching with controllable self-compliant Ta2O5-based RRAM","authors":"W. Chen, T. Y. Wu, S. Y. Yang, W. H. Liu, H. Y. Lee, Y. S. Chen, C. Tsai, P. Gu, K. Tsai, H. Wei, P. S. Chen, Y. H. Wang, F. Chen, M. Tsai","doi":"10.1109/VLSI-TSA.2012.6210099","DOIUrl":null,"url":null,"abstract":"Ta/Ta<sub>2</sub>O<sub>5</sub> RRAMs show self-compliant characteristics in some Ta or Ta<sub>2</sub>O<sub>5</sub> thickness range but Ti/TaO<sub>x</sub> RRAMs always need current compliance due to totally consumption of SC conduction layer.","PeriodicalId":388574,"journal":{"name":"Proceedings of Technical Program of 2012 VLSI Technology, System and Application","volume":"118 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Technical Program of 2012 VLSI Technology, System and Application","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSI-TSA.2012.6210099","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Ta/Ta2O5 RRAMs show self-compliant characteristics in some Ta or Ta2O5 thickness range but Ti/TaOx RRAMs always need current compliance due to totally consumption of SC conduction layer.
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