A. Sadoun, S. Mansouri, M. Chellali, A. Hima, Z. Benamara
{"title":"The effect of introduction of HfO2 on the electrical characterization of the Pt/HfO2/n-GaN","authors":"A. Sadoun, S. Mansouri, M. Chellali, A. Hima, Z. Benamara","doi":"10.1109/CCEE.2018.8634446","DOIUrl":null,"url":null,"abstract":"In this paper is presented a theoretical study of effects of Hafnium dioxide on the electrical properties of (Pd/n-GaN) Schottky diode under a temperature of 300°K, using the forward bias I-V measurements. A simulation on the (Pd/n-GaN) and (Pd/HfO2/n-GaN) structure is presented, then simulation results are compared with experimental results. A well matching was found between simulations and experimental results. Barrier height (Φb), ideality factor (n) and series resistance (Rs) effects was also studied. In addition, (I-V), Norde, Cheung and Cheung, H(I) and G(I), Chattopadhyay and Mikhelashvili methods are used to extract different parameters. Obtained theoritical results are well matched with experimental measurements. The ATLAS module of SILVACO-TCAD software has been used in numeric simulations.","PeriodicalId":200936,"journal":{"name":"2018 International Conference on Communications and Electrical Engineering (ICCEE)","volume":"73 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 International Conference on Communications and Electrical Engineering (ICCEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CCEE.2018.8634446","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
In this paper is presented a theoretical study of effects of Hafnium dioxide on the electrical properties of (Pd/n-GaN) Schottky diode under a temperature of 300°K, using the forward bias I-V measurements. A simulation on the (Pd/n-GaN) and (Pd/HfO2/n-GaN) structure is presented, then simulation results are compared with experimental results. A well matching was found between simulations and experimental results. Barrier height (Φb), ideality factor (n) and series resistance (Rs) effects was also studied. In addition, (I-V), Norde, Cheung and Cheung, H(I) and G(I), Chattopadhyay and Mikhelashvili methods are used to extract different parameters. Obtained theoritical results are well matched with experimental measurements. The ATLAS module of SILVACO-TCAD software has been used in numeric simulations.
在300°K温度下，利用正偏I-V测量方法，研究了二氧化铪对(Pd/n-GaN)肖特基二极管电学性能的影响。对(Pd/n-GaN)和(Pd/HfO2/n-GaN)结构进行了仿真，并将仿真结果与实验结果进行了比较。模拟结果与实验结果吻合较好。还研究了屏障高度(Φb)、理想因子(n)和串联电阻(Rs)的影响。此外，还采用(I- v)、Norde、Cheung and Cheung、H(I) and G(I)、Chattopadhyay和Mikhelashvili方法提取不同参数。所得理论结果与实验结果吻合较好。利用SILVACO-TCAD软件中的ATLAS模块进行了数值模拟。
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