{"title":"Thermally robust TiSi/sub 2/ on heavily doped polycrystalline silicon over severe topography","authors":"A. Perera, C. Lage, A. Sitaram, M. Woo, S. Tatti","doi":"10.1109/IEDM.1992.307486","DOIUrl":null,"url":null,"abstract":"Using TiSi/sub 2/ to strap polysilicon over severe topography is hampered by the non-conformality of sputter deposited titanium (Ti) films. Thinning of the Ti translates into regions with thin silicide which degrade drastically when subject to 900 degrees C anneals. Etching back a thick polysilicon film to the desired thickness planarizes the surface for Ti deposition and eliminates the influence of underlying topography. The fabrication process outlined provides a final TiSi/sub 2/ sheet resistance approximately 2 Omega / Square Operator , after a 900 degrees C anneal in O/sub 2/.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1992 International Technical Digest on Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1992.307486","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Using TiSi/sub 2/ to strap polysilicon over severe topography is hampered by the non-conformality of sputter deposited titanium (Ti) films. Thinning of the Ti translates into regions with thin silicide which degrade drastically when subject to 900 degrees C anneals. Etching back a thick polysilicon film to the desired thickness planarizes the surface for Ti deposition and eliminates the influence of underlying topography. The fabrication process outlined provides a final TiSi/sub 2/ sheet resistance approximately 2 Omega / Square Operator , after a 900 degrees C anneal in O/sub 2/.<>
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