Leakage power and delay analysis of LECTOR based CMOS circuits

Preeti Verma, R. Mishra
{"title":"Leakage power and delay analysis of LECTOR based CMOS circuits","authors":"Preeti Verma, R. Mishra","doi":"10.1109/ICCCT.2011.6075117","DOIUrl":null,"url":null,"abstract":"In CMOS circuits, scaling of threshold voltage results in increase of sub-threshold leakage current. According to the International Roadmap of Semiconductor (ITRS), leakage is projected to grow exponentially during the next decade. LECTOR is a technique for designing CMOS gates in order to reduce the leakage current without affecting the dynamic power dissipation. This paper presents the analysis for leakage current and propagation delay of the basic CMOS gates viz. NOT, NAND and NOR gates implementing LECTOR technique.","PeriodicalId":285986,"journal":{"name":"2011 2nd International Conference on Computer and Communication Technology (ICCCT-2011)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"42","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 2nd International Conference on Computer and Communication Technology (ICCCT-2011)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCCT.2011.6075117","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 42

Abstract

In CMOS circuits, scaling of threshold voltage results in increase of sub-threshold leakage current. According to the International Roadmap of Semiconductor (ITRS), leakage is projected to grow exponentially during the next decade. LECTOR is a technique for designing CMOS gates in order to reduce the leakage current without affecting the dynamic power dissipation. This paper presents the analysis for leakage current and propagation delay of the basic CMOS gates viz. NOT, NAND and NOR gates implementing LECTOR technique.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
基于LECTOR的CMOS电路的漏功率和延迟分析
在CMOS电路中,阈值电压的缩放会导致亚阈值泄漏电流的增大。根据国际半导体路线图(ITRS),泄漏预计将在未来十年呈指数级增长。LECTOR是一种设计CMOS栅极的技术,目的是在不影响动态功耗的情况下减小漏电流。本文分析了采用LECTOR技术的基本CMOS门,即非门、NAND门和NOR门的漏电流和传播延迟。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
An architecture for integrating mobile ad hoc network and the Internet using cluster head gateway mechanism Four phase clocking rule for energy efficient digital circuits — An adiabatic concept New proxy signature scheme with message recovery using verifiable self-certified public keys Developing trust policies for cloud scenarios Offline signature verification using grid based feature extraction
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1