Generic Model of SH-LED for Mid-infrared (2-5µm) Applications

2008 First International Conference on Emerging Trends in Engineering and Technology Pub Date : 2008-07-16 DOI:10.1109/ICETET.2008.8

Sanjeev, P. Chakrabarti

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引用次数: 2

Abstract

In this paper, we present a physics based model of a P+ -InAs0.36Sb0.20P0.44/ n0 -InAs/n -InAs single heterostructure light emitting diode (SH-LED) suitable for use as source in gas detection and futuristic optical fiber communication systems in the mid-infrared spectral region at 300 K. The model takes into account all dominating radiative and non-radiative recombination processes, interfacial recombination and self-absorption in the active layer of the SH-LED structure. The effect of various recombination mechanisms on the quantum efficiency, modulation bandwidth and output power of the LED has been evaluated. The proposed SH- LED has been studied for its utility in mid-infrared optical fiber communication by considering the modulation bandwidth and its variation with active layer width of the SH-LED structure. The I-V characteristic of the SH-LED has been evaluated and cut-in voltage found to be 0.26 V. The output power of the SH-LED has been computed as a function of bias current and it is found to be in good agreement with the reported experimental results.

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用于中红外(2-5µm)应用的SH-LED通用模型

在本文中，我们提出了一种基于物理模型的P+ -InAs0.36Sb0.20P0.44/ n0 -InAs/n -InAs单异质结构发光二极管(SH-LED)，适用于300 K下中红外光谱区域的气体探测和未来光纤通信系统。该模型考虑了SH-LED结构有源层中所有主要的辐射和非辐射复合过程、界面复合和自吸收。评价了不同的复合机制对LED的量子效率、调制带宽和输出功率的影响。通过考虑SH-LED结构的调制带宽及其随有源层宽度的变化，研究了SH-LED在中红外光纤通信中的应用。对SH-LED的I-V特性进行了评估，发现切断电压为0.26 V。计算了SH-LED输出功率随偏置电流的变化规律，结果与实验结果吻合较好。

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2008 First International Conference on Emerging Trends in Engineering and Technology

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