P. Tinguy, F. Lardet-Vieudrin, B. Dulmet, J. Leost, L. Couteleau
{"title":"Toward full crystal oscillator integration for RF applications","authors":"P. Tinguy, F. Lardet-Vieudrin, B. Dulmet, J. Leost, L. Couteleau","doi":"10.1109/FREQ.2010.5556375","DOIUrl":null,"url":null,"abstract":"This paper presents the performances of an integrated oscillator working at 3.3V power supply for XO applications, extended to OCXO by digital selections. It is realized in a standard 0.35µm SiGe BiCMOS technology from austriamicrosystems AG®. Some experimental characterizations have been performed at 40 MHz and give good agreement with simulations. This die is then used to develop a miniaturized XO design on silicon substrate (8.5×8.5 mm2).","PeriodicalId":344989,"journal":{"name":"2010 IEEE International Frequency Control Symposium","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE International Frequency Control Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/FREQ.2010.5556375","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
This paper presents the performances of an integrated oscillator working at 3.3V power supply for XO applications, extended to OCXO by digital selections. It is realized in a standard 0.35µm SiGe BiCMOS technology from austriamicrosystems AG®. Some experimental characterizations have been performed at 40 MHz and give good agreement with simulations. This die is then used to develop a miniaturized XO design on silicon substrate (8.5×8.5 mm2).
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