K. Kushiya, M. Tachiyuki, T. Kase, Y. Nagoya, T. Miura, D. Okumura, M. Satoh, I. Sugiyama, O. Yamase
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引用次数: 3
Abstract
In order to explain the observations on the post-deposition light soaking and understand this unique and valuable effect, a model is proposed and confirmed to work well. Based on the model, released H/sub 2/O molecules through the dehydration of Zn(OH)/sub 2/ in the Zn(O,S,OH)/sub x/ buffer during the light soaking is considered as a major player to affect the form factor (FF). The most striking result in this study is the post-deposition light soaking effect can be controlled from reversible to irreversible by adjusting the light soaking conditions. Approach to reduce the Zn(OH)/sub 2/ concentration in the buffer contributes to make a better p-n heterojunction and improve the yield.
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