Lin Wei, Cheng Chao, U. Singh, Ruchil Jain, Li Leng Goh, P. R. Verma
{"title":"A novel contact field plate application in drain-extended-MOSFET transistors","authors":"Lin Wei, Cheng Chao, U. Singh, Ruchil Jain, Li Leng Goh, P. R. Verma","doi":"10.23919/ISPSD.2017.7988957","DOIUrl":null,"url":null,"abstract":"A new kind of field plate as contact field plate is fabricated for hot carrier injection improvement, significant decrease in the specified on resistance degradation is observed without substantially affecting the breakdown voltage of devices. Charge pumping method and simulation are carried out to study the degradation mechanism. Our results clearly show that the application of contact field plate can improve the device robustness in terms of hot carrier injection.","PeriodicalId":202561,"journal":{"name":"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/ISPSD.2017.7988957","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
A new kind of field plate as contact field plate is fabricated for hot carrier injection improvement, significant decrease in the specified on resistance degradation is observed without substantially affecting the breakdown voltage of devices. Charge pumping method and simulation are carried out to study the degradation mechanism. Our results clearly show that the application of contact field plate can improve the device robustness in terms of hot carrier injection.
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