{"title":"MD simulation of small boron cluster implantation","authors":"T. Aoki, T. Seki, J. Matsuo","doi":"10.1109/IWJT.2010.5474974","DOIUrl":null,"url":null,"abstract":"Molecular dynamics (MD) simulations of small boron clusters impacting on silicon (100) surface were carried out. The impacts of B10, B18 and B36 accelerated with 2keV, 3.6keV and 7.6keV (200eV per boron atom) showed characteristic irradiation effect, heavy mixing or amourphosization, and crater formation at the impact point. The MD results also suggested, when the incident energy per atom is several hundreds eV/atom and is kept constant for various cluster sizes, the depth profiles of implanted boron atoms and damage increases as the cluster size.","PeriodicalId":205070,"journal":{"name":"2010 International Workshop on Junction Technology Extended Abstracts","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 International Workshop on Junction Technology Extended Abstracts","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWJT.2010.5474974","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Molecular dynamics (MD) simulations of small boron clusters impacting on silicon (100) surface were carried out. The impacts of B10, B18 and B36 accelerated with 2keV, 3.6keV and 7.6keV (200eV per boron atom) showed characteristic irradiation effect, heavy mixing or amourphosization, and crater formation at the impact point. The MD results also suggested, when the incident energy per atom is several hundreds eV/atom and is kept constant for various cluster sizes, the depth profiles of implanted boron atoms and damage increases as the cluster size.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
