Alfredo Perez-Carrillo, S. Taylor, J. Silva-Martínez, A. Karsilayan
{"title":"A large-signal blocker robust transimpedance amplifier for coexisting radio receivers in 45nm CMOS","authors":"Alfredo Perez-Carrillo, S. Taylor, J. Silva-Martínez, A. Karsilayan","doi":"10.1109/RFIC.2011.5940696","DOIUrl":null,"url":null,"abstract":"A baseband transimpedance amplifier for coexisting radio receivers is presented. It exploits active feedback to improve out-of-band large-signal attenuation, minimizing in-band distortion due to close-in blockers. A fully-differential prototype of the proposed solution has been designed and implemented in 45nm CMOS. Experimental results show that it can handle linearly single tones of ±10mA, withstanding blocking currents of ±9mA at 50MHz and beyond before reaching P1dB in a 10MHz bandwidth. The fabricated device occupies 0.25mm2, largely MOM finger capacitors, and draws 17mA from a 2.5V supply.","PeriodicalId":448165,"journal":{"name":"2011 IEEE Radio Frequency Integrated Circuits Symposium","volume":"76 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE Radio Frequency Integrated Circuits Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2011.5940696","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10
Abstract
A baseband transimpedance amplifier for coexisting radio receivers is presented. It exploits active feedback to improve out-of-band large-signal attenuation, minimizing in-band distortion due to close-in blockers. A fully-differential prototype of the proposed solution has been designed and implemented in 45nm CMOS. Experimental results show that it can handle linearly single tones of ±10mA, withstanding blocking currents of ±9mA at 50MHz and beyond before reaching P1dB in a 10MHz bandwidth. The fabricated device occupies 0.25mm2, largely MOM finger capacitors, and draws 17mA from a 2.5V supply.