X-Ray Topography Research of Dislocation Structure in Epitaxial GeSi Films Grown on Vicinal (001) Si Substrates

A. Y. Krasotin, A. Kolesnikov, E. M. Trukhanov, A. Vasilenko, A. S. Derjabin, A.S. llin
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Abstract

It has been theoretically predicted for the quasi-equilibrium conditions that at the first relaxation stage two dislocation arrays are formed in the vicinal (1 1 15macr) interface. The slip plane of these arrays is the same $(1 1 1) and Burgers vector directions are [0 2 2] and [2 0 2]. In this paper the investigation results of the stress relieving in GeSi/Si epitaxial heterosystem are presented, it was found that about 30% MDs have (a/2)[0 2 2] Burgers vector and 30% - (a/2) [2 0 2] one. The total amount of MDs with (a/2)[0 2 2] and (a/2)[2 0 2] Burgers vector is less than 40% of all registered MDs. This result confirms theoretical data
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邻近(001)Si衬底外延GeSi薄膜位错结构的x射线形貌研究
在准平衡条件下,理论上预测了在第一松弛阶段相邻(1 1 15macr)界面上形成两个位错阵列。这些数组的滑动面是相同的$(1 1 1),Burgers矢量方向是[0 2 2]和[2 2 2]。本文介绍了GeSi/Si外延异质系统中应力消除的研究结果,发现约30%的MDs具有(a/2)[0 2 2] Burgers矢量和30% - (a/2)[2 2] Burgers矢量。(a/2)[0 2 2]和(a/2)[2 2] Burgers向量的MDs总数不到所有注册MDs的40%。这一结果证实了理论数据
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