Study of CsPbBr3 Perovskite Light-Emitting Diodes with PEDOT:PSS-MAPbBr3 QDs Complex Hole Transport Layer

Abstract

This work presents the effect of a complex hole transport layer (HTL) of poly (3,4-thylenedioxythiophene): poly(styrenesulfonate) (PEDOT: PSS) and MAPbBr3 quantum dots (QDs) in cesium lead bromide perovskite light-emitting diodes (CsPbBr3 PeLEDs) structure. The MAPbBr3 QDs used MAPbBr3 bulk crystals formed by the liquid-phase crystal growth method at constant temperature as the source material. The CsPbBr3 PeLEDs with PEDOT:PSS-MAPbBr3 QDs complexe HTL exhibited the better performance, to compare the CsPbBr3 PeLEDs with PEDOT:PSS-MAPbBr3 QDs complexe HTL, owing to the MAPbBr3 QDs in PEDOT:PSS layer apparently boosted injection efficiency such that the injected holes recombine with electrons in the CsPbBr3 active layer, rapidly, and then and emissions. The best results of luminescence and external quantum efficiency of CsPbBr3 PeLEDs with PEDOT:PSS-MAPbBr3 QDs complex hole transport layer were 10810 cd/m² and 0.34% at an applied voltage of 5.5 V, respectively.