{"title":"High Performance Visible-Range Photodetector for Wide-Bandwidth Applications","authors":"J. Gaitonde, Sunit Digamber Fulari, R. Lohani","doi":"10.1109/i-PACT44901.2019.8960139","DOIUrl":null,"url":null,"abstract":"We present a theoretical model of front illuminated GaN Optical Field Effect Transistor (OPFET) with floating gate accounting for photovoltaic and photoconductive effects. Our simulation results reveal desirable photodetector characteristics in the visible-region at the modulation frequencies in the microwave to terahertz range. The device exhibits superior performance than many of the photodetectors working at microwave or terahertz frequencies. The device has a great potential for wide bandwidth applications.","PeriodicalId":214890,"journal":{"name":"2019 Innovations in Power and Advanced Computing Technologies (i-PACT)","volume":"128 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 Innovations in Power and Advanced Computing Technologies (i-PACT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/i-PACT44901.2019.8960139","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We present a theoretical model of front illuminated GaN Optical Field Effect Transistor (OPFET) with floating gate accounting for photovoltaic and photoconductive effects. Our simulation results reveal desirable photodetector characteristics in the visible-region at the modulation frequencies in the microwave to terahertz range. The device exhibits superior performance than many of the photodetectors working at microwave or terahertz frequencies. The device has a great potential for wide bandwidth applications.
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