T. Horiike, S. Hamada, T. Uno, H. Machida, M. Ishikawa, H. Sudo, Y. Ohshita, A. Ogura
{"title":"Composition control of GexSbyTez film for PCRAM application by chemical vapor deposition","authors":"T. Horiike, S. Hamada, T. Uno, H. Machida, M. Ishikawa, H. Sudo, Y. Ohshita, A. Ogura","doi":"10.1109/NVMTS.2011.6137082","DOIUrl":null,"url":null,"abstract":"This paper describes chemical vapor deposition (CVD) of GeSbTe (GST) film for fabricating phase change memory, especially for the back end of line memory application. We successfully controlled the film composition including stoichiometric Ge2Sb2Te5 by changing deposition conditions. The deposited films had a significantly smooth surface and it was possible to fill a high aspect hole. The mechanism to control the film composition in a high aspect hole is discussed in detail based on the precursor interferences experiment in the cavity.","PeriodicalId":197829,"journal":{"name":"2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding","volume":"310 10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NVMTS.2011.6137082","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
This paper describes chemical vapor deposition (CVD) of GeSbTe (GST) film for fabricating phase change memory, especially for the back end of line memory application. We successfully controlled the film composition including stoichiometric Ge2Sb2Te5 by changing deposition conditions. The deposited films had a significantly smooth surface and it was possible to fill a high aspect hole. The mechanism to control the film composition in a high aspect hole is discussed in detail based on the precursor interferences experiment in the cavity.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
