Yi-Hsuan Fan, Jyi-Tsong Lin, Y. Eng, Yu-Che Chang, Cheng-Hsin Chen, Kuan-Yu Lu, Chih-Hsuan Tai
{"title":"A simulation study of a novel dual-channel body-tied MOSFET","authors":"Yi-Hsuan Fan, Jyi-Tsong Lin, Y. Eng, Yu-Che Chang, Cheng-Hsin Chen, Kuan-Yu Lu, Chih-Hsuan Tai","doi":"10.1109/IWJT.2010.5474898","DOIUrl":null,"url":null,"abstract":"In this work, a novel device called dual-channel body-tied (DCBT) MOSFET is proposed. According to numerical simulations, the DCBT MOSFET can reduce the lattice temperature about 51.6% in top and 53.8% in bottom channel, respectively, while maintain the desirable short-channel characteristics, compared with the conventional non-body-tied DC structure.","PeriodicalId":205070,"journal":{"name":"2010 International Workshop on Junction Technology Extended Abstracts","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 International Workshop on Junction Technology Extended Abstracts","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWJT.2010.5474898","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
In this work, a novel device called dual-channel body-tied (DCBT) MOSFET is proposed. According to numerical simulations, the DCBT MOSFET can reduce the lattice temperature about 51.6% in top and 53.8% in bottom channel, respectively, while maintain the desirable short-channel characteristics, compared with the conventional non-body-tied DC structure.
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