High performance and reliability Ge channel CMOS with a MoS2 capping layer

Abstract

High performance Ge CMOS with quantum well-structured channels has been successfully realized using a single MoS2 capping layer. Thanks to a large valence band offset (0.43 eV) and conduction band offset (0.5 eV) between the two-layers-thick MoS2 and the Ge substrate, both holes and electrons within the Ge p- and n-MOSFETs are confined into Ge channels and the scattering due to the traps in gate stacks is suppressed effectively. As a result, the MoS2/Ge p- and n-MOSFETs exhibit much improved hole and electron mobilities, as well as the improved device reliability behaviors.